ttyS0 tty1
  +   ˆl–Ü4ý( ©³( 	Å€fàB¦-ÿÁ„dy¯_†I|¥+ÀÄ ?÷     /* SPDX-License-Identifier: GPL-2.0 */
/*
 *  Copyright 2017 - Free Electrons
 *
 *  Authors:
 *	Boris Brezillon <boris.brezillon@free-electrons.com>
 *	Peter Pan <peterpandong@micron.com>
 */

#ifndef __LINUX_MTD_NAND_H
#define __LINUX_MTD_NAND_H

#include <linux/mtd/mtd.h>

struct nand_device;

/**
 * struct nand_memory_organization - Memory organization structure
 * @bits_per_cell: number of bits per NAND cell
 * @pagesize: page size
 * @oobsize: OOB area size
 * @pages_per_eraseblock: number of pages per eraseblock
 * @eraseblocks_per_lun: number of eraseblocks per LUN (Logical Unit Number)
 * @max_bad_eraseblocks_per_lun: maximum number of eraseblocks per LUN
 * @planes_per_lun: number of planes per LUN
 * @luns_per_target: number of LUN per target (target is a synonym for die)
 * @ntargets: total number of targets exposed by the NAND device
 */
struct nand_memory_organization {
	unsigned int bits_per_cell;
	unsigned int pagesize;
	unsigned int oobsize;
	unsigned int pages_per_eraseblock;
	unsigned int eraseblocks_per_lun;
	unsigned int max_bad_eraseblocks_per_lun;
	unsigned int planes_per_lun;
	unsigned int luns_per_target;
	unsigned int ntargets;
};

#define NAND_MEMORG(bpc, ps, os, ppe, epl, mbb, ppl, lpt, nt)	\
	{							\
		.bits_per_cell = (bpc),				\
		.pagesize = (ps),				\
		.oobsize = (os),				\
		.pages_per_eraseblock = (ppe),			\
		.eraseblocks_per_lun = (epl),			\
		.max_bad_eraseblocks_per_lun = (mbb),		\
		.planes_per_lun = (ppl),			\
		.luns_per_target = (lpt),			\
		.ntargets = (nt),				\
	}

/**
 * struct nand_row_converter - Information needed to convert an absolute offset
 *			       into a row address
 * @lun_addr_shift: position of the LUN identifier in the row address
 * @eraseblock_addr_shift: position of the eraseblock identifier in the row
 *			   address
 */
struct nand_row_converter {
	unsigned int lun_addr_shift;
	unsigned int eraseblock_addr_shift;
};

/**
 * struct nand_pos - NAND position object
 * @target: the NAND target/die
 * @lun: the LUN identifier
 * @plane: the plane within the LUN
 * @eraseblock: the eraseblock within the LUN
 * @page: the page within the LUN
 *
 * These information are usually used by specific sub-layers to select the
 * appropriate target/die and generate a row address to pass to the device.
 */
struct nand_pos {
	unsigned int target;
	unsigned int lun;
	unsigned int plane;
	unsigned int eraseblock;
	unsigned int page;
};

/**
 * enum nand_page_io_req_type - Direction of an I/O request
 * @NAND_PAGE_READ: from the chip, to the controller
 * @NAND_PAGE_WRITE: from the controller, to the chip
 */
enum nand_page_io_req_type {
	NAND_PAGE_READ = 0,
	NAND_PAGE_WRITE,
};

/**
 * struct nand_page_io_req - NAND I/O request object
 * @type: the type of page I/O: read or write
 * @pos: the position this I/O request is targeting
 * @dataoffs: the offset within the page
 * @datalen: number of data bytes to read from/write to this page
 * @databuf: buffer to store data in or get data from
 * @ooboffs: the OOB offset within the page
 * @ooblen: the number of OOB bytes to read from/write to this page
 * @oobbuf: buffer to store OOB data in or get OOB data from
 * @mode: one of the %MTD_OPS_XXX mode
 *
 * This object is used to pass per-page I/O requests to NAND sub-layers. This
 * way all useful information are already formatted in a useful way and
 * specific NAND layers can focus on translating these information into
 * specific commands/operations.
 */
struct nand_page_io_req {
	enum nand_page_io_req_type type;
	struct nand_pos pos;
	unsigned int dataoffs;
	unsigned int datalen;
	union {
		const void *out;
		void *in;
	} databuf;
	unsigned int ooboffs;
	unsigned int ooblen;
	union {
		const void *out;
		void *in;
	} oobbuf;
	int mode;
};

const struct mtd_ooblayout_ops *nand_get_small_page_ooblayout(void);
const struct mtd_ooblayout_ops *nand_get_large_page_ooblayout(void);
const struct mtd_ooblayout_ops *nand_get_large_page_hamming_ooblayout(void);

/**
 * enum nand_ecc_engine_type - NAND ECC engine